Title :
Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation
Author :
Rupp, K. ; Lagger, P.W. ; Grasser, T. ; Jüngel, A.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A significant elevation of the high-energy-tail of the distribution function is observed in the 22nm case, confirming that the inclusion of carrier-carrier-scattering is required for the investigation of hot-carrier-effects in scaled-down devices.
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; hot carriers; Boltzmann transport equation; MOSFET devices; Monte Carlo simulations; arbitrary-order spherical harmonic expansion method; bulk silicon; carrier-carrier-scattering inclusion; deterministic numerical solutions; distribution function; high-energy-tail; hot-carrier-effects; size 110 nm; size 22 nm; Boltzmann equation; Distribution functions; Harmonic analysis; Memory management; Monte Carlo methods; Scattering; Silicon;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242856
