Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors

Author

Benali, A. ; Traversa, F.L. ; Albareda, G. ; Aghoutane, M. ; Oriols, X.

Author_Institution

Electron. Eng. Dept., Univ. Autonoma de Barcelona Bellaterra, Barcelona, Spain

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices, to tackle this problem. Analytical and Monte Carlo (MC) simulations show how the HF spectrum noticeably depends on the ratio between lateral (Ly, Lz) and longitudinal (Lx) dimensions of a gate-all-around transistor.

Keywords

Monte Carlo methods; geometry; microwave transistors; BITLLES simulator; HF spectrum; Monte Carlo technique; RF behavior; RShP theorem; Ramo-Shockley-Pellegrini theorem; geometry engineering; intrinsic AC behavior; low-dimensional gate-all-around transistors; quantum electronic devices; time dependent current; Equations; Geometry; Logic gates; Monte Carlo methods; Noise; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242865

Filename

6242865