Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations

Acoustic phonon scattering is known to play an important role in accurately describing hole-transport in semiconductors such as Si and Ge. However, it has been difficult to treat accurately and efficiently due to its dispersion relationship, thus it is often treated as an elastic process or by using constant phonon energy. Here we present an efficient approach for handling inelastic acoustic phonon scattering taking into account the full dispersion relationship. The proposed method unlike previous methods makes no assumption about the carrier distribution function, thus it is suitable for application within a device environment. The model is able to reproduce accurately the velocity-field characteristics over a wide-range of temperatures.