Title :
0.5 V 1.3 GHz voltage controlled ring oscillator
Author :
Li, Tianwang ; Ye, Bo ; Jiang, Jinguang
Author_Institution :
Dept. of Integrated Circuits & Commun. Software, Wuhan Univ., Wuhan, China
Abstract :
A three stage ultra low power, low voltage ring oscillator is presented in this paper. The bulk of the PMOS transistor is used as the control voltage, the substrate of the NMOS transistor is also forward biased to reduce the threshold of the NMOS transistor for low voltage operation. The proposed VCO is designed and simulated in 0.18 ¿m RF CMOS process. Simulation results show that the proposed VCO can work at 0.5 V power supply, the oscillation frequency of VCO is from 124 MHz to 1.3 GHz. The power consumption is 85 ¿W when the VCO works at 1.3 GHz.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; radiofrequency integrated circuits; voltage-controlled oscillators; NMOS transistor; PMOS transistor; RF CMOS process; frequency 1.3 GHz; low voltage ring oscillator; oscillation frequency; power 85 muW; size 0.18 mum; ultra low power ring oscillator; voltage 0.5 V; voltage controlled ring oscillator; CMOS process; Energy consumption; Low voltage; MOSFETs; Power supplies; Radio frequency; Ring oscillators; Threshold voltage; Voltage control; Voltage-controlled oscillators; Ultra low power; bulk biasing; low voltage; ring oscillator;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351177
