Title :
Evaluation of power MOSFET models
Author :
Budihardjo, Irwan ; Lauritzen, P.O.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The device models are used in simulation of power converter circuits to enable accurate simulation of switching waveforms. Two selected power MOSFET models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. Any proprietary model can be evaluated using three simple simulations
Keywords :
power MOSFET; C-V plots; gate charge plots; power MOSFET models; power converter circuits; simulation; switching waveforms; Circuit simulation; Diodes; Impedance; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power system modeling; Pulse width modulation; SPICE; Switching circuits;
Conference_Titel :
Northcon/94 Conference Record
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-9995-1
DOI :
10.1109/NORTHC.1994.638967
