Title :
Stochastic inductance model of OTA-based inductor
Author :
Banchuin, Rawid ; Chaisrichatorn, Rougsan ; Chipipop, Boonruk
Author_Institution :
Dept. of Comput. Eng., Siam Univ., Bangkok, Thailand
Abstract :
In this research, the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been explored and modeled as the corresponding probability density function, PDF which the complete probabilistic distribution information can be obtained. This research has been performed based upon CMOS technology. The derived model has been found to provide a sufficient accuracy due to the strong agreement between its corresponding calculated cumulative distribution function, CDF and the measured one. The proposed model is promisingly applicable to the OTA-based inductor of any topologies constructed with any basis OTA. Hence, it has been found to be a convenience tool for the design of various applications of the OTA-based inductor. Furthermore, the conceptual idea behind this research is also applicable to any current controlled active inductor.
Keywords :
CMOS integrated circuits; inductance; inductors; operational amplifiers; probability; CMOS technology; OTA-based inductor; cumulative distribution function; probabilistic distribution information; probability density function; stochastic inductance; Active inductors; CMOS technology; Circuits; Distribution functions; Gallium arsenide; Inductance; Network topology; Probability density function; Semiconductor device modeling; Stochastic processes; About four key words or phrases in order of importance; separated by commas.;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351186
