• DocumentCode
    2647710
  • Title

    Microwave GaAs FET Switching

  • Author

    Gaspari, R.A. ; Yee, H.H.

  • fYear
    1978
  • fDate
    27-29 June 1978
  • Firstpage
    58
  • Lastpage
    60
  • Abstract
    Microwave switching using GaAs field effect transistors offers very high speed and low drive control power. Using arrays of such FETs, an 8 x 8 switch matrix was constructed for 4 GHz SS-TDMA spacecraft applications which achieved 1 ns transition time at 10 mW drive control power. Matrix isolation over 500 MHz bandwidth was 50 dB.
  • Keywords
    Aerospace control; Aircraft; Communication switching; Driver circuits; Gallium arsenide; Microwave FETs; Microwave amplifiers; Operational amplifiers; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1978 IEEE-MTT-S International
  • Conference_Location
    Ottawa, ON, Canada
  • Type

    conf

  • DOI
    10.1109/MWSYM.1978.1123786
  • Filename
    1123786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2647710