Title :
Microwave GaAs FET Switching
Author :
Gaspari, R.A. ; Yee, H.H.
Abstract :
Microwave switching using GaAs field effect transistors offers very high speed and low drive control power. Using arrays of such FETs, an 8 x 8 switch matrix was constructed for 4 GHz SS-TDMA spacecraft applications which achieved 1 ns transition time at 10 mW drive control power. Matrix isolation over 500 MHz bandwidth was 50 dB.
Keywords :
Aerospace control; Aircraft; Communication switching; Driver circuits; Gallium arsenide; Microwave FETs; Microwave amplifiers; Operational amplifiers; Switches; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123786
