Side extraction duopigatron-type ion source for ion implantation

Author

Gushenets, V.I. ; Oks, E.M. ; Hershcovitch, Ady ; Johnson, B.M. ; Kulevoy, T.V.

Author_Institution

High Current Electron. Inst., Russian Acad. of Sci., Tomsk

fYear

2006

fDate

4-8 June 2006

Firstpage

225

Lastpage

225

Abstract

Summary form only given. We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, such that the ion can be extracted from side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1times40 mm. The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has stable arc, uniformly bright illumination, and dense plasma. The present work describes some of preliminary operating parameters of the ion source using argon, BF₃. The total unanalyzed beam currents are 23 mA using Ar at an arc current of 5 A and 13 mA using BF₃ gas at an arc current of 6 A

Keywords

arcs (electric); argon; boron compounds; ion sources; particle beam extraction; plasma sources; 1 mm; 13 mA; 23 mA; 40 mm; 5 A; 6 A; Ar; BF₃; arc current; axial ion extraction; dense plasma; duoPIGatron-type ion source; ion implantation; stable arc; Apertures; Argon; Ion implantation; Ion sources; Lighting; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma sources; Plasma stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. The 33rd IEEE International Conference on

Conference_Location

Traverse City, MI

Print_ISBN

1-4244-0125-9

Type

conf

DOI

10.1109/PLASMA.2006.1707097

Filename

1707097