Title :
A Technique for Predicting Large Signal Performance of a GaAs MESFET
Author :
Willing, H.A. ; Rauscher, C. ; de Santis, P.
Abstract :
A method is described for accurately predicting nonlinear microwave performance of GaAs MESFET devices. The method utilizes time-domain analysis and is based upon experimentally characterized bias-dependence of device circuit model elements. Precise predictions are made of fundamental and harmonic power levels up to 6 dB of gain compression.
Keywords :
Capacitance; Electron mobility; Gallium arsenide; Laboratories; MESFETs; Packaging; Predictive models; Scattering parameters; Virtual manufacturing; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123813
