Title :
Intermodulation Distortion Behavior Of GaAs Power FETS
Author :
Strid, E.W. ; Duder, T.C.
Abstract :
The 4 GHz intermodulation distortion (IMD) behavior of several Power GaAs FETs from different manufacturers is studied. The two-tone IMD and AM to PM conversion is a function of the source and load impedances. The IMD is not "well-behaved" in general (3:1 IMD slope), and therefore the third-order intercept point is not valid in characterizing these power FET\´s. This data was applied in the design of a 2 watt 3.7-4.2 GHz linear amplifier. lts linearity performance is compared to that of a 2 GHz linear bipolar amplifier.
Keywords :
FETs; Gallium arsenide; Impedance; Intermodulation distortion; Linearity; Manufacturing; Performance gain; Power generation; Testing; Tuning;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123814
