Title :
A 1.0 Watt GaAs MESFET Oscillator at X-Band
Author :
Rector, R.M. ; Vendelin, G.D.
Abstract :
The design and performance of high power GaAs MESFET oscillators are described for two commercially available MESFET transistors. The oscillators were fabricated with packaged common-gate transistors on microstrip circuits. Power levels, and efficiencies are comparable to amplifier performance at the same frequency.
Keywords :
Circuits; Frequency; Gallium arsenide; Impedance; Injection-locked oscillators; MESFETs; Microstrip; Packaging; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123817
