DocumentCode
2648330
Title
A 1.0 Watt GaAs MESFET Oscillator at X-Band
Author
Rector, R.M. ; Vendelin, G.D.
fYear
1978
fDate
27-29 June 1978
Firstpage
145
Lastpage
146
Abstract
The design and performance of high power GaAs MESFET oscillators are described for two commercially available MESFET transistors. The oscillators were fabricated with packaged common-gate transistors on microstrip circuits. Power levels, and efficiencies are comparable to amplifier performance at the same frequency.
Keywords
Circuits; Frequency; Gallium arsenide; Impedance; Injection-locked oscillators; MESFETs; Microstrip; Packaging; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123817
Filename
1123817
Link To Document