Title :
Phase Characteristics of I-Band Pulsed Gate GaAs FET Power Amplifiers
Author :
Camisa, R.L. ; Ernst, R.L. ; Goel, J. ; Wolkstein, H.J.
Abstract :
The measured phase sensitivities and transients of FET power amplifiers having pulsed gate voltages are very low and are suitable for phased array applications. Gate pulsing requires that the FETs have good rf performance and a drain-to-gate breakdown voltage large enough to support the sum of the gate voltage, drain voltage, and maximum rf voltage swing.
Keywords :
Breakdown voltage; FETs; Gallium arsenide; Phase measurement; Phased arrays; Power amplifiers; Power measurement; Pulse amplifiers; Pulse measurements; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123818
