• DocumentCode
    2648348
  • Title

    Phase Characteristics of I-Band Pulsed Gate GaAs FET Power Amplifiers

  • Author

    Camisa, R.L. ; Ernst, R.L. ; Goel, J. ; Wolkstein, H.J.

  • fYear
    1978
  • fDate
    27-29 June 1978
  • Firstpage
    147
  • Lastpage
    149
  • Abstract
    The measured phase sensitivities and transients of FET power amplifiers having pulsed gate voltages are very low and are suitable for phased array applications. Gate pulsing requires that the FETs have good rf performance and a drain-to-gate breakdown voltage large enough to support the sum of the gate voltage, drain voltage, and maximum rf voltage swing.
  • Keywords
    Breakdown voltage; FETs; Gallium arsenide; Phase measurement; Phased arrays; Power amplifiers; Power measurement; Pulse amplifiers; Pulse measurements; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1978 IEEE-MTT-S International
  • Conference_Location
    Ottawa, ON, Canada
  • Type

    conf

  • DOI
    10.1109/MWSYM.1978.1123818
  • Filename
    1123818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2648348