Title :
Dynamics of XUV and X-ray radiation spectrum from a 200-ns X-pinch plasma
Author :
Aranchuk, L.E. ; Larour, J.
Author_Institution :
Ecole Polytech., Palaiseau
Abstract :
Summary form only given. X-pinch plasmas are point-like X-ray sources with potential application for backlighting diagnostic in the keV range. A very compact LC generator (40 kV, 200 kA) has been used for driving X-pinches made of 18-25 mum diameter Cu, Mo and W wires with a current rise time of 200 ns. A series of XRD and silicon p-i-n detectors with various filters were used to study their X-ray spectra in the range 20 eV-10 keV. Time resolved spectral analysis allows us to assume some stages of X-pinch process. The first stage deals with plasma load preparation, while XUV radiation spectrum is below 400 eV. Its total radiation power is (5-10)times107 W during ~125 ns before the main peak. It yields a total energy ~5-10 J. Then, 3-5 ns preceding the main peak one can observe plasma heating accompanied by emission increasing in the range 200-400 eV, but without appreciable value in the harder region >400 eV. Here, the total power is about (2-4)times10 8 W. The main peak power is estimated to be a little bit higher than 1 TW with 20-35% in the E>900 eV photon energy range. Its FWHM is 0.4-0.7 ns in the energy region higher than 1 keV. At last, an emission tail with a specific times about 75-100 ns is composed of XUV radiation softer than 400 eV. Here, the radiation power varies at the range (1-4)times108 W. A few humps with FWHW 6-20 ns are very often observed on the radiation tail
Keywords :
Z pinch; copper; molybdenum; plasma X-ray sources; plasma diagnostics; plasma heating; time resolved spectra; tungsten; 18 to 25 mum; 1E8 to 4E8 W; 20 to 10000 eV; 200 kA; 200 ns; 3 to 5 ns; 40 kV; 5 to 10 J; 5E7 to 10E7 W; Cu; FWHM; LC generator; Mo; W; X-pinch plasma; X-ray radiation spectrum; XRD; XUV radiation spectrum; backlighting diagnostics; photon energy; plasma heating; plasma load preparation; point-like X-ray sources; silicon p-i-n detectors; time resolved spectral analysis; PIN photodiodes; Plasma applications; Plasma diagnostics; Plasma sources; Plasma x-ray sources; Silicon; Tail; Wires; X-ray detection; X-ray scattering;
Conference_Titel :
Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. The 33rd IEEE International Conference on
Conference_Location :
Traverse City, MI
Print_ISBN :
1-4244-0125-9
DOI :
10.1109/PLASMA.2006.1707126