DocumentCode :
2648611
Title :
A very linear BiCMOS transconductor for high-frequency filtering applications
Author :
Castello, R. ; Montecchi, F. ; Alini, R. ; Baschirotto, A.
Author_Institution :
Dipartimento di Elettronica, Pavia Univ., Italy
fYear :
1990
fDate :
1-3 May 1990
Firstpage :
1364
Abstract :
A differential transconductance stage implemented in BiCMOS technology is described. The key features of the new stage are: (1) a total harmonic distortion (THD) less than 0.15% up to a 3 Vpp differential input signal, assuming 2% mismatch of the input devices, with a 5-V supply; (2) a second pole frequency typically higher than 2 GHz; and (3) a gain of more than 50 dB. All of these features are obtained from simulations performed using SPICE and correspond to a BiCMOS process featuring 2-μm minimum channel length and 7-GHz bipolar fT. The structure of the transconductance is described and its operation explained. The nonidealities of the stage, like distortion, finite gain, parasitic poles, noise, and offset, are discussed. The complete implementation is presented. The simulated performance of a bandpass filter based on the new transconductor is reported. The results demonstrate that using the new circuit a filter centered around 5 MHz with a Q of 22 should result in a Q precision better than 12% without any Q tuning
Keywords :
BIMOS integrated circuits; active filters; band-pass filters; electric distortion; linear integrated circuits; noise; poles and zeros; 2 GHz; 2 micron; 5 MHz; 5 V; 50 dB; 7 GHz; BiCMOS technology; bandpass filter; differential transconductance stage; finite gain; high-frequency filtering; minimum channel length; monolithic IC; noise; offset; parasitic poles; total harmonic distortion; Band pass filters; BiCMOS integrated circuits; Circuit noise; Filtering; Frequency; Nonlinear filters; SPICE; Total harmonic distortion; Transconductance; Transconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
Type :
conf
DOI :
10.1109/ISCAS.1990.112383
Filename :
112383
Link To Document :
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