Title :
The gate metal degradation mechanism and electromigration evaluation of PHEMT devices
Author :
Huang, Yun ; Li, Shajin ; Hong, Xiao
Author_Institution :
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China
Abstract :
An evaluation structure about gate metal degradation of pseudomorphic High-Electron Mobility Transistor (PHEMT) is designed in this study. It realized separated evaluation of the resisted electromigration levels between the evaporation metal Ti/Pt/Au and the plating metal Au in gate metal structure. There are 4 multiple disparities between their resisted electromigration levels. And the resisted electromigration levels of electrioplating Au in gate metal Ti/Pt/Au-Au structure is the weakest. The Ti/Pt/Au-Au electromigration life under constant current stress and high temperature stress test has been obtained, evaluated the stability of PHEMT gate metal, provided reference and basis for the PHEMT power components designers to improve the stability of gate metal structure.
Keywords :
III-V semiconductors; aluminium compounds; electromigration; gallium arsenide; gold; high electron mobility transistors; platinum; titanium; AlGaAs-Ti-Pt-Au; PHEMT devices; evaporation metal; gate metal degradation mechanism; gate metal structure; plating metal; pseudomorphic high-electron mobility transistor; resisted electromigration levels; Degradation; Electromigration; Gold; Logic gates; PHEMTs; Stress; PHEMT; electromigration; evaluation; mechanism;
Conference_Titel :
Quality, Reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE), 2011 International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-1229-6
DOI :
10.1109/ICQR2MSE.2011.5976633
