Development and comparison of high-power semiconductor switches

Author

Huang, Alex Q. ; Motto, Kevin ; Li, Yuxin

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

70

Abstract

In this paper a comparison of three types of semiconductor devices suitable for high power applications is presented. All of these devices feature high switching speed and snubberless turn-off capability. The devices compared include two high voltage insulated gate bipolar transistor (HVIGBT) and two types of hard-driven GTO thyristors-the integrated gate commutated thyristor (IGCT) and the emitter turn-on (ETO) thyristor. The conduction and switching characteristics are compared, and an assessment is presented of the impact on high-power converter circuits for these devices. Test results are shown

Keywords

MOS-controlled thyristors; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; conduction characteristics; emitter turn-on thyristor; hard-driven GTO thyristors; high switching speed; high voltage insulated gate bipolar transistor; high-power converter circuits; high-power semiconductor switches; integrated gate commutated thyristor; snubberless turn-off capability; switching characteristics; Anodes; Current density; Equivalent circuits; Insulated gate bipolar transistors; Low voltage; Power semiconductor switches; Semiconductor devices; Snubbers; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.885333

Filename

885333