Title :
An analysis of turn-off behavior of planar and trench gate IGBTs under soft and hard switching conditions
Author :
Iwamoto, Hideo ; Kondo, Hisao ; Hongtao, He ; Kawakami, Akira
Author_Institution :
Div. of Power Device, Mitsubishi Electr. Corp., Japan
Abstract :
This paper presents the results of an investigation on turn-off behaviors of the planar and trench gate IGBTs under hard and soft switching conditions. Voltage and current waveforms and power losses are investigated through the simulation and experiment at various parameters of dv/dt, collector current, gate resistance and junction temperature. Moreover, electric potential and field distribution and carrier behavior inside the chips are studied by the simulation. It is noted that the trench gate IGBT has advantage over the planar gate IGBT for the hard switching application. On the other hand, the turn-off loss of the planar gate IGBT under soft switching application is slightly lower than that of the trench gate IGBT
Keywords :
insulated gate bipolar transistors; isolation technology; losses; power semiconductor switches; switching; carrier behavior; collector current; current waveforms; electric potential; field distribution; gate resistance; hard switching conditions; junction temperature; planar gate IGBT; power losses; soft switching conditions; trench gate IGBT; turn-off behavior; turn-off loss; voltage waveforms; Analytical models; Biomedical electrodes; Capacitance; Circuit simulation; Current measurement; Insulated gate bipolar transistors; Medical simulation; Switching circuits; Tail; Zero voltage switching;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.885335
