Title :
Microwave GaAs Power FET Amplifiers with Lumped-Element Impedance Matching Networks
Author :
Hua Quen Tserng ; Macksey, H.M.
Abstract :
Lumped-element impedance matching has been used successfully for the design of GaAs power FET amplifiers at C- and X bands. It is shown that output powers up to 8W with 1 dB bandwidth of from 1 to 5 GHz can be obtained.
Keywords :
Bandwidth; Contracts; Gain; Gallium arsenide; Impedance matching; Laboratories; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123864
