Title :
Dual-Gate GaAs FET as a Frequency Multiplier at Ku-Band
Author :
Chen, P.T. ; Li, C. ; Wang, P.H.
Abstract :
The feasibility of using dual-gate GaAs FET as a frequency multiplier over the Ku-band with a good conversion gain has been demonstrated. Experimentally, it achieved 8dB conversion gain from frequency doubling at 12.6 GHz and 2.5 dB gain from frequency tripling at 12 GHz. Also it possesses a built-in variable gain control over 36 dB dynamic range.
Keywords :
Circuit testing; Epitaxial layers; Frequency conversion; Gain; Gallium arsenide; Microwave FETs; Ohmic contacts; Power harmonic filters; Substrates; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123873
