DocumentCode
2649351
Title
Dual-Gate GaAs FET as a Frequency Multiplier at Ku-Band
Author
Chen, P.T. ; Li, C. ; Wang, P.H.
fYear
1978
fDate
27-29 June 1978
Firstpage
309
Lastpage
311
Abstract
The feasibility of using dual-gate GaAs FET as a frequency multiplier over the Ku-band with a good conversion gain has been demonstrated. Experimentally, it achieved 8dB conversion gain from frequency doubling at 12.6 GHz and 2.5 dB gain from frequency tripling at 12 GHz. Also it possesses a built-in variable gain control over 36 dB dynamic range.
Keywords
Circuit testing; Epitaxial layers; Frequency conversion; Gain; Gallium arsenide; Microwave FETs; Ohmic contacts; Power harmonic filters; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123873
Filename
1123873
Link To Document