• DocumentCode
    2649364
  • Title

    86 GHz High Power IMPATT Negative Resistance Amplifier

  • Author

    Ando, Masaki ; Haga, Isao ; Kaneko, Katsuya ; Kanmuri, Noboru

  • fYear
    1978
  • fDate
    27-29 June 1978
  • Firstpage
    312
  • Lastpage
    314
  • Abstract
    Describes the development of a millimeter-wave two-stage IMPATT negative resistance amplifier, using a Si DDR IMPATT diode sealed in a ceramic package to obtain a gain of 10 dB and an output power of 18 dBm in the 86 GHz frequency range.
  • Keywords
    Ceramics; Diodes; Distortion measurement; Error analysis; Frequency; Gain measurement; High power amplifiers; Packaging; Phase shift keying; Repeaters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1978 IEEE-MTT-S International
  • Conference_Location
    Ottawa, ON, Canada
  • Type

    conf

  • DOI
    10.1109/MWSYM.1978.1123874
  • Filename
    1123874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2649364