Title :
86 GHz High Power IMPATT Negative Resistance Amplifier
Author :
Ando, Masaki ; Haga, Isao ; Kaneko, Katsuya ; Kanmuri, Noboru
Abstract :
Describes the development of a millimeter-wave two-stage IMPATT negative resistance amplifier, using a Si DDR IMPATT diode sealed in a ceramic package to obtain a gain of 10 dB and an output power of 18 dBm in the 86 GHz frequency range.
Keywords :
Ceramics; Diodes; Distortion measurement; Error analysis; Frequency; Gain measurement; High power amplifiers; Packaging; Phase shift keying; Repeaters;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123874
