Title :
Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components
Author :
Planson, D. ; Margenat, S. ; Nallet, F. ; Morel, H. ; Locatelli, M.L. ; Chante, J.P. ; Renault, D.
Author_Institution :
Centre de Genie Electr. de Lyon, Villeurbanne, France
Abstract :
Mixed mode simulations of a buck power converter are performed with ISE TCAD tools in order to predict the conduction and the switching losses of the switching cell power devices. Then an averaged model of the converter is built to simulate its electrical and thermal behaviors using either silicon or silicon carbide power components. The proposed method enables to foresee the characteristics of any converter using new components, or new design
Keywords :
DC-DC power convertors; circuit analysis computing; finite element analysis; losses; power semiconductor switches; switching circuits; DC/DC power conversion; ISE TCAD tools; Si; SiC; averaged model; buck power converter; computer simulation; conduction losses; electrical behavior simulation; mixed mode simulations; silicon carbide power components; silicon power components; switching cell power devices; switching losses; thermal behavior simulation; Buck converters; Finite element methods; Insulated gate bipolar transistors; MOSFET circuits; Semiconductor diodes; Semiconductor materials; Silicon carbide; Switches; Switching converters; Voltage;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.885364
