Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Author

Planson, D. ; Margenat, S. ; Nallet, F. ; Morel, H. ; Locatelli, M.L. ; Chante, J.P. ; Renault, D.

Author_Institution

Centre de Genie Electr. de Lyon, Villeurbanne, France

Volume

1

fYear

2000

fDate

2000

Firstpage

241

Abstract

Mixed mode simulations of a buck power converter are performed with ISE TCAD tools in order to predict the conduction and the switching losses of the switching cell power devices. Then an averaged model of the converter is built to simulate its electrical and thermal behaviors using either silicon or silicon carbide power components. The proposed method enables to foresee the characteristics of any converter using new components, or new design

Keywords

DC-DC power convertors; circuit analysis computing; finite element analysis; losses; power semiconductor switches; switching circuits; DC/DC power conversion; ISE TCAD tools; Si; SiC; averaged model; buck power converter; computer simulation; conduction losses; electrical behavior simulation; mixed mode simulations; silicon carbide power components; silicon power components; switching cell power devices; switching losses; thermal behavior simulation; Buck converters; Finite element methods; Insulated gate bipolar transistors; MOSFET circuits; Semiconductor diodes; Semiconductor materials; Silicon carbide; Switches; Switching converters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.885364

Filename

885364