• DocumentCode
    2649423
  • Title

    Phase control of N-type nanocrystalline diamond films deposited in microwave plasmas from methane and acetylene

  • Author

    Ikeda, Tomohiro ; Teii, Kungen

  • Author_Institution
    Dept. of Appl. Sci. for Electron. & Mater., Kyushu Univ., Fukuoka
  • fYear
    2006
  • fDate
    4-8 June 2006
  • Firstpage
    293
  • Lastpage
    293
  • Abstract
    Summary form only given. Nanocrystalline diamond (NCD) film is a novel form of artificial diamond grown from highly fragmented hydrocarbons by using plasmas. The films are the composite of nanodiamond particles and amorphous carbon matrix. One of the unique properties of NCD films is n-type conductivity. In this study, the amount and composition of amorphous nondiamond phases in NCD films deposited from moderate or low-pressure microwave plasmas from CH4 and C2H2 are examined to obtain a clue to phase-pure NCD films. Also, the electrical properties of nitrogen-doped films are examined to demonstrate semiconductor properties. Visible Raman spectroscopy for NCD films with average crystallite sizes below 25 nm revealed that the amount of amorphous carbon corresponding to the D peak intensity was reduced and consequently the diamond peak was clearly observed when C2H2 was used. The electrical properties of nitrogen-doped NCD films were also examined and discussed along microstructures and phase composition of the films
  • Keywords
    Raman spectra; crystal microstructure; crystallites; diamond; electrical conductivity; elemental semiconductors; nanostructured materials; nitrogen; plasma CVD; semiconductor doping; semiconductor thin films; visible spectra; C:N2; acetylene; amorphous carbon matrix; crystallite; fragmented hydrocarbons; methane; microstructures; microwave plasmas; n-type conductivity; n-type nanocrystalline diamond films; nanodiamond particles; phase composition; phase control; visible Raman spectroscopy; Amorphous materials; Conductive films; Conductivity; Crystallization; Hydrocarbons; Phase control; Plasma properties; Raman scattering; Semiconductor films; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. The 33rd IEEE International Conference on
  • Conference_Location
    Traverse City, MI
  • Print_ISBN
    1-4244-0125-9
  • Type

    conf

  • DOI
    10.1109/PLASMA.2006.1707166
  • Filename
    1707166