Metallic wafer and chip bonding for LED packaging

Author

Hsu, C.C. ; Wang, S.J. ; Liu, C.Y.

Author_Institution

Dept. of Chem. Eng. & Mater. Eng., Nat. Central Univ., Chung-li, Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

LED chip bonding on Cu foil have been investigated. We found that with thicker Cu coating on the back side of LED chip, a better lighting efficiency will be obtained. Indium(In) chip bonding shows slightly better thermal dissipation than Sn chip bonding. Also, a new wafer bonding for producing GaN on Si substrate have been successfully demonstrated. This technique enables us to produce a high temperature bonding by using a low temperature process.

Keywords

III-V semiconductors; antireflection coatings; chip scale packaging; cooling; copper; elemental semiconductors; foils; gallium compounds; indium; light emitting diodes; optical films; silicon; tin; wafer bonding; Cu; Cu coating; Cu foil; GaN on Si substrate; GaN-Si; In; LED chip bonding; LED packaging; Sn; Sn chip bonding; high temperature bonding; indium chip bonding; lighting efficiency; low temperature process; metallic wafer bonding; thermal dissipation; Assembly; Coatings; Gallium nitride; LED lamps; Light emitting diodes; Packaging; Temperature; Thermal conductivity; Tin; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274506

Filename

1274506