Title :
High Power V-Band Double Drift IMPATT Amplifier
Author :
Weller, K.P. ; English, D.L. ; Nakaji, E.M.
Abstract :
A 490 mW circulator-coupled IMPATT reflection amplifier with 6.9 dB gain at 59.25 GHz and 1.9 GHz bandwidth for 1 dB rolloff has been developed using double-drift IMPATT diodes on diamond in a novel circuit designed to minimize subharmonic instabilities.
Keywords :
Circuits; Coaxial components; Diodes; Frequency; High power amplifiers; Operational amplifiers; Packaging; Power amplifiers; Power generation; Reflection;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123894
