Title :
Surface-Oriented Transferred-Electron Devices
Author :
Shur, M.S. ; Eastman, L.F.
Abstract :
The application of MESFET technology to manufacturing of surface-oriented transferred electron devices is discussed. The limitations related to the contact resistance, fringing capacitance and domain formation time are analysed for GaAs and InP devices. It is shown that power-delay products for GaAs surface-oriented TED´s might ben comparable to power-delay products for GaAs MESFET´s.
Keywords :
Capacitance; Contact resistance; Frequency estimation; Gallium arsenide; Gunn devices; Indium phosphide; Integrated circuit technology; MESFETs; Manufacturing; Surface resistance;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123896
