Title :
Cryogenic Millimeter-Wave Receiver Using Molecular Beam Epitaxy Diodes
Author :
Linke, R.A. ; Schneider, M.V. ; Cho, A.Y.
Abstract :
A millimeter-wave receiver has been designed and built for the 60-90 GHz frequency band using GaAs mixer diodes prepared by molecular beam epitaxy (MBE). The devices are mounted in a reduced height waveguide mixer which is followed by a cooled parametric amplifier. At 18 K the receiver shows a total single sideband system temperature of 310 K at a frequency of 81 GHz. This is the lowest system temperature ever reported for a receiver built with a resistive diode mixer.
Keywords :
Cryogenics; Diodes; Frequency; Gallium arsenide; Inductors; Millimeter wave transistors; Molecular beam epitaxial growth; Receiving antennas; Temperature; Wire;
Conference_Titel :
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location :
Ottawa, ON, Canada
DOI :
10.1109/MWSYM.1978.1123903
