Title :
Smooth And Clean Dry Etching Of GaAs And InP For OIEC Microfabrication
Author_Institution :
NEC Corporation, Ibaraki, Japan
fDate :
29 Jul-2 Aug 1991
Keywords :
Dry etching; Gallium arsenide; Indium phosphide;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.638999
