DocumentCode
2650037
Title
Effects on emission properties of interface thin layers in InGaN/GaN quantum well structures
Author
Cheng, Yung-Chen ; Chen, Homg-Shyang ; Yang, C.C. ; Feng, Zhe-Chuang ; Li, Gang Alan
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
1
fYear
2003
fDate
15-19 Dec. 2003
Abstract
We report the variations of optical characteristics in InGaN/GaN quantum well samples with different thin layer (about 1 nm) structures between the wells and barriers, including silicon-doped InN and InGaN compounds.
Keywords
III-V semiconductors; electroluminescence; elemental semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; silicon; wide band gap semiconductors; 1 nm; InGaN-GaN; InGaN/GaN quantum well structures; InGaN:Si; InN:Si; emission properties; optical characteristics; silicon-doped InGaN compounds; silicon-doped InN compounds; thin layers; Current measurement; Doping; Fabry-Perot; Gallium nitride; Indium; Light emitting diodes; MOCVD; Ohmic contacts; Photoluminescence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1274540
Filename
1274540
Link To Document