DocumentCode
2650070
Title
Submillimeter Wave Frequency Multipliers and IMPATT Oscillators
Author
Hirayama, M. ; Takada, T. ; Ishibashi, T. ; Ohmori, M.
fYear
1978
fDate
27-29 June 1978
Firstpage
435
Lastpage
437
Abstract
GaAs frequency multipliers up to 600 GHz and Si p+-n-n+ IMPATT oscillators up to 430 GHz were developed. An output power of 0.12 mW at 450 GHz was obtained by the tripler using a thin film integrated circuit and a GaAs honeycomb-type Schottky barrier diode. The IMPATT oscillator cooled by liquid nitrogen delivered 2.2 mW at 412 GHz with 0.047 conversion efficiency.
Keywords
Circuits; Frequency; Gallium arsenide; Microstrip; Oscillators; Schottky barriers; Schottky diodes; Semiconductor diodes; Substrates; Waveguide junctions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1978 IEEE-MTT-S International
Conference_Location
Ottawa, ON, Canada
Type
conf
DOI
10.1109/MWSYM.1978.1123917
Filename
1123917
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