Title :
Modeling of layout-dependent STI stress in 65nm Technology
Author :
Xue, Ji-ying ; Deng, Yang-dong Steve ; Ye, Zuo-chang ; Yang, Liu ; Yu, Zhi-ping
Author_Institution :
Instn. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this work, we investigate the impact of layout shapes on STI stress. Based on a stress simulator developed by us, we propose analytical models to correlate the STI stress and the layout parameters. Our model is validated by data collected from a commercial 65 nm process. The experimental results prove that the device characteristics predicted by our model closely match the measured data.
Keywords :
isolation technology; semiconductor device models; layout-dependent STI stress modelling; shallow- trench-isolation; size 65 nm; stress simulator; Analytical models; Etching; Foundries; MOSFET circuits; Pattern analysis; Predictive models; Shape; Silicon; Temperature; Thermal stresses; 65nm technology; STI stress; layout-dependent; model;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351335
