Title :
An equivalent lumped-circuit model for on-chip symmetric intertwined transformer
Author :
Kang, Jin ; Sun, Lingling ; Wen, Jincai ; Zhao, Mingfu
Author_Institution :
Key Lab. of the RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A physics-based equivalent lumped-circuit model for on-chip symmetric intertwined transformer is presented in this paper. This model accurately predicts the skin effect and proximity effect of the primary and secondary coils inductors over a wide-frequency range using a ladder `4-element´ structure, respectively. One transformer loop and two RC networks are used to model the substrate loss related to substrate eddy current loss and capacitive and reactive effect of lateral substrate coupling. Two transformers were fabricated on a standard 0.18-um 1P6M RF CMOS technology to further verify the accuracy of the proposed model.
Keywords :
CMOS integrated circuits; RC circuits; coils; equivalent circuits; inductors; integrated circuit modelling; ladder networks; radiofrequency integrated circuits; skin effect; transformers; 1P6M RF CMOS technology; RC networks; capacitive effect; ladder 4-element structure; lateral substrate coupling; on-chip symmetric intertwined transformer; physics-based equivalent lumped-circuit model; primary coil inductor; proximity effect; reactive effect; secondary coil inductor; size 0.18 mum; skin effect; substrate eddy current loss; CMOS technology; Circuit topology; Coils; Inductors; Low-noise amplifiers; Proximity effect; Radio frequency; Semiconductor device modeling; Skin effect; Spirals; On-chip symmetric intertwined transformer; equivalent lumped-circuit; skin effect; substrate loss;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351336