• DocumentCode
    2650646
  • Title

    Wireless built-in self-repair architectures for embedded RAMs

  • Author

    Wang, Zhen-Yu ; Tsai, Yi-Ming ; Hsiao, Yuan-Cheng ; Lu, Shyue-Kung

  • Author_Institution
    Dept. of Electron. Eng., Fu-Jen Catholic Univ., Taipei, Taiwan
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    573
  • Lastpage
    576
  • Abstract
    In order to reduce test and repair cost in advanced system-on-chip products, wireless built-in self-repair (BISR) techniques for embedded memories are proposed in this paper. The redundant memory is divided into spare rows, spare column group blocks, and spare words which are used to replace faulty cells in the main memory. Based on this redundancy architecture, a BISR scheme suitable for built-in implementation is proposed. According to simulation results, our techniques have higher repair rates and lower hardware overhead as compared with previous works. Finally, we integrated the proposed memory with BISR circuitry into the HOY wireless test system. Experimental results show that the hardware overhead (including the wireless interface modules) is only 0.39% for a 16 M-bit SRAM.
  • Keywords
    SRAM chips; built-in self test; embedded systems; integrated circuit reliability; integrated circuit testing; redundancy; system-on-chip; ASIC; BISR method; HOY wireless test system; SRAM; built-in implementation; embedded RAM; embedded memories; hardware overhead; redundancy architecture; redundant memory; reliability; repair rate; spare column group blocks; spare rows; spare words; system-on-chip; wireless built-in self-repair architecture; wireless interface modules; Automatic testing; Circuit faults; Circuit simulation; Circuit testing; Costs; Hardware; Random access memory; Redundancy; System testing; System-on-a-chip; BISR; Embedded Memory; Reliability; Yield;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351350
  • Filename
    5351350