• DocumentCode
    2650667
  • Title

    Technology for the Microwave Solid State Devices of the 80´s: Molecules, Electrons and Ions

  • Author

    Berson, B.

  • fYear
    1979
  • fDate
    April 30 1979-May 2 1979
  • Firstpage
    3
  • Lastpage
    3
  • Abstract
    Circuit, system and device designers, encouraged by the success of the past ten years, are conspiring to accelerate the pace of device development. What they want is improved performance, higher levels of integration, more uniformity, better reliability, and lower cost. Getting there will require a new generation of semiconductor technologies. Traditional methods of materials growth may need to be replaced by the tailoring of materials on a molecule by molecule basis; device structures may be fabricated using ion implantation and laser annealing, eliminating furnace operations; wet etching of devices may be replaced by dry plasma and ion etching; optical exposure of photo-resists may be replaced by exposure to electrons or x-rays; and masks may be eliminated by direct exposure of wafers.
  • Keywords
    Acceleration; Costs; Electrons; Integrated circuit reliability; Microwave devices; Microwave technology; Optical materials; Semiconductor materials; Solid state circuits; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1979 IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1979.1123950
  • Filename
    1123950