Title :
Low Temperature Performance of GaAs MESFETs at L-Band
Author :
Pierro, J. ; Louie, K.
fDate :
April 30 1979-May 2 1979
Abstract :
A considerable amount of work has been reported on the use of GaAs MESFET amplifiers at cryogenic temperatures. Most of the applications were for frequencies above 4 GHz. In this paper we discuss a 1.4-GHz GaAs MESFET amplifier cooled to 77 K with a noise temperature of less than 20 Kelvins over a 100-MHz bandwidth. The amplifier serves as an IF amplifier for a millimeter-wave cooled mixer.
Keywords :
Bandwidth; Cryogenics; FETs; Frequency; Gallium arsenide; Impedance; Kelvin; L-band; MESFETs; Temperature dependence;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1123959
