• DocumentCode
    2651054
  • Title

    High Power Pulsed IMPATT Oscillator Near 140 GHz

  • Author

    Ngan, Y.C. ; Nakaji, E.M.

  • fYear
    1979
  • fDate
    April 30 1979-May 2 1979
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    IMPATT diodes with a double drift p+-p-n-n+ doping profile were fabricated and tested for high power pulsed operation. Using a pulse width of 100 ns and a 0.5% duty factor, a peak output power of 3.0W with 2.8% conversion efficiency has been measured at 140 GHz.
  • Keywords
    Circuit optimization; Fabrication; Frequency; Ion implantation; Microwave Theory and Techniques Society; Oscillators; Power generation; Pulse transformers; Semiconductor diodes; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1979 IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1979.1123975
  • Filename
    1123975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2651054