• DocumentCode
    2651140
  • Title

    In-situ Processing Of GaAs/AiGaAs By Low Damage Selective Etching And Focussed Ion Beam Patterning

  • Author

    Skidmore, J.A. ; Spiers, G.D. ; English, J.H. ; Xu, Z. ; Green, D.L. ; Young, D.B. ; Coldren, L.A. ; Hu, E.L. ; Petroff, P.M.

  • Author_Institution
    University of California, Santa Barbara, CA 93106
  • fYear
    1991
  • fDate
    29 Jul-2 Aug 1991
  • Firstpage
    35
  • Lastpage
    36
  • Keywords
    Chemicals; Dry etching; Gallium arsenide; III-V semiconductor materials; Implants; Ion beams; Low voltage; Molecular beam epitaxial growth; Substrates; Surface contamination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
  • Print_ISBN
    0-87942-618-7
  • Type

    conf

  • DOI
    10.1109/LEOSST.1991.639006
  • Filename
    639006