• DocumentCode
    2651173
  • Title

    A simple parameter extraction method for on-chip inductors

  • Author

    Lu, Xiaoming ; Xi, Jingtian ; Yan, Na ; Min, Hao

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    1105
  • Lastpage
    1108
  • Abstract
    In this paper a simple parameter extraction method is proposed. The extraction method is applied to extract parameters from the measured or simulated S-parameters of on-chip inductors fabricated with SMIC 0.18 ¿m CMOS RF technology. The result shows a good agreement with the measured or simulated data over a wide frequency range without any optimization.
  • Keywords
    CMOS integrated circuits; S-parameters; inductors; radiofrequency integrated circuits; SMIC CMOS RF technology; on-chip inductors; simple parameter extraction method; simulated S-parameters; size 0.18 mum; CMOS technology; Coupling circuits; Data mining; Electrical resistance measurement; Frequency measurement; Inductors; Parameter extraction; Radiofrequency integrated circuits; Scattering parameters; Strips; on-chip inductor; parameter extraction; wide band;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351381
  • Filename
    5351381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2651173