Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot

Author

Kamioka, J. ; Kodera, T. ; Horibe, K. ; Kawano, Y. ; Oda, S.

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

We realized lithographically-defined electrically-tunable silicon quantum dot (QD) and charge sensor. Two types of device were fabricated and measured. One is heavily P-doped, and the other is back gate (BG)-induced undoped QD device. I-V characteristic of QD and charge sensor was clearly observed in both devices. Then, we estimate capacitance between the charge sensor and QD or two side gates (SGs) from the measurement and the simulation, and compared two devices in terms of their charging energy.

Keywords

elemental semiconductors; nanofabrication; nanolithography; nanosensors; phosphorus; semiconductor growth; semiconductor quantum dots; silicon; QD I-V characteristic; Si:P; back gate-induced undoped QD device; back-gate induced silicon quantum dot; capacitance; charge sensor; charging energy; electrically-tunable silicon quantum dot; heavily P-doped silicon quantum dot; lithography; Capacitance; Magnetic resonance imaging; Magnetic tunneling; Quantum dots; Sensors; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243288

Filename

6243288