DocumentCode
2651701
Title
Optoelectrical lifetime evaluation of single holes in SOI MOSFET
Author
Du, Wei ; Putranto, Dedy Septono ; Satoh, Hiroaki ; Ono, Atsushi ; Priambodo, Purnomo Sidi ; Hartanto, Djoko ; Inokawa, Hiroshi
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear
2012
fDate
10-11 June 2012
Firstpage
1
Lastpage
2
Abstract
Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.
Keywords
MOSFET; elemental semiconductors; silicon-on-insulator; SOI MOSFET; Si; continuous light; digitized drain current; higher transverse electric field; histograms; optoelectrical lifetime evaluation; optoelectrical method; single hole lifetime; Charge carrier processes; Electric fields; Fitting; Histograms; Logic gates; MOSFET circuits; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location
Honolulu, HI
ISSN
2161-4636
Print_ISBN
978-1-4673-0996-7
Electronic_ISBN
2161-4636
Type
conf
DOI
10.1109/SNW.2012.6243297
Filename
6243297
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