DocumentCode :
2651812
Title :
Analysis of hysteresis characteristics of fabricated SiNW biosensor in aqueous environment with reference electrode
Author :
Lee, Jung Han ; Lee, Jieun ; Sun, Min-Chul ; Lee, Won Hee ; Uhm, Mihee ; Hwang, Seonwook ; Chung, In-Young ; Kim, Dong Myong ; Kim, Dae Hwan ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
fYear :
2012
fDate :
10-11 June 2012
Firstpage :
1
Lastpage :
2
Abstract :
A silicon nanowire field effect transistor (SiNW FET) was fabricated through the fabrication method compatible with that of MOSFET including back-end process without lift-off process. However, when it is working in an aqueous solution, the SiNW device as well as other transducer devices has various inherent instability problems such as hysteresis characteristics. We observed the hysteresis in DI water (DW) and confirmed that it is caused by mobile ion effect in DW with various experimental results.
Keywords :
biosensors; electrodes; elemental semiconductors; field effect transistors; hysteresis; nanowires; silicon; transducers; DI water; MOSFET; Si; SiNW FET; aqueous environment; aqueous solution; back-end processing; biosensor; hysteresis characteristics; hysteresis characteristics analysis; inherent instability problems; mobile ion effect; reference electrode; silicon nanowire field effect transistor; transducer devices; Current measurement; FETs; Fabrication; Hysteresis; Logic gates; MOSFET circuits; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
Conference_Location :
Honolulu, HI
ISSN :
2161-4636
Print_ISBN :
978-1-4673-0996-7
Electronic_ISBN :
2161-4636
Type :
conf
DOI :
10.1109/SNW.2012.6243305
Filename :
6243305
Link To Document :
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