• DocumentCode
    2652010
  • Title

    A low breakdown-voltage charge pump based on Cockcroft-Walton structure

  • Author

    Zhang, Renyuan ; Huang, Zhangcai ; Inoue, Yasuaki

  • Author_Institution
    Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
  • fYear
    2009
  • fDate
    20-23 Oct. 2009
  • Firstpage
    328
  • Lastpage
    331
  • Abstract
    A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.
  • Keywords
    charge pump circuits; electric breakdown; voltage multipliers; Cockcroft-Walton type charge pump circuit; capacitor; efficiency 87 percent; efficiency 98.9 percent; low breakdown voltage process; low breakdown-voltage charge pump; power efficiency; transistor; voltage boosting efficiency; Boosting; Breakdown voltage; Capacitance; Capacitors; Charge pumps; Circuits; Diodes; Fabrication; Switches; Threshold voltage; Cockcroft-Walton type; boosting efficiency; breakdown voltage; power efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2009. ASICON '09. IEEE 8th International Conference on
  • Conference_Location
    Changsha, Hunan
  • Print_ISBN
    978-1-4244-3868-6
  • Electronic_ISBN
    978-1-4244-3870-9
  • Type

    conf

  • DOI
    10.1109/ASICON.2009.5351433
  • Filename
    5351433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652010