DocumentCode :
2652174
Title :
Self Activated, 20 kW X-Band Bulk Effect Semiconductor Limiter
Author :
Morris, G. ; Higgins, V. ; Hall, G. ; Anand, Y. ; Bilotta, R. ; Jellison, F.
fYear :
1979
fDate :
April 30 1979-May 2 1979
Firstpage :
243
Lastpage :
248
Abstract :
A self activated solid-state X-band multi-stage receiver protector using a high power bulk semiconductor limiter followed by a two-stage junction diode limiter has been developed for military RADAR applications. The receiver protector handles 20 kW of peak power at a 0.25 mu sec pulse width and 4000Hz pulse repetition frequency. Spike and flat leakage powers are less than 250 mW and 50 mW respectively. High volume semiconductor batch processes and fabrication techniques were implemented to obtain this low cost, yet reliable receiver protector. In addition the bulk limiter concept has been successfully applied to millimeter wave frequency.
Keywords :
Costs; Fabrication; Frequency; Millimeter wave technology; Protection; Radar applications; Semiconductor device reliability; Semiconductor diodes; Solid state circuits; Space vector pulse width modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Type :
conf
DOI :
10.1109/MWSYM.1979.1124032
Filename :
1124032
Link To Document :
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