DocumentCode
2652198
Title
High temperature on-wafer measurement structure for DMOS characterization
Author
Boianceanu, Cristian ; Simon, Dan ; Blanaru, Radu ; Costachescu, Dragos ; Pfost, Martin
Author_Institution
IFRO ATV TM, Infineon Technol. Romania, Bucharest, Romania
fYear
2011
fDate
4-7 April 2011
Firstpage
170
Lastpage
175
Abstract
DMOS transistors for power applications dissipate significant amount of energy, leading to substantial self-heating. Thus appears the necessity of DMOS characterization at high temperatures. In this paper we present a test structure, with integrated heating elements, used for device characterization up to 500°C.
Keywords
MOSFET; high-temperature electronics; semiconductor device measurement; DMOS transistors; high temperature on-wafer measurement structure; integrated heating elements; self-heating; temperature 500 C; Calibration; Current measurement; Resistance heating; Temperature; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location
Amsterdam
ISSN
1071-9032
Print_ISBN
978-1-4244-8526-0
Electronic_ISBN
1071-9032
Type
conf
DOI
10.1109/ICMTS.2011.5976841
Filename
5976841
Link To Document