The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes

Author

Chen, C.H. ; Su, Y.K. ; Chang, S.J. ; Hung, H.

Author_Institution

Dept. of Electron. Eng., Cheng-Shiu Inst. of Technol., Kaohsiung, Taiwan

Volume

1

fYear

2003

fDate

15-19 Dec. 2003

Abstract

GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and re-deposition techniques. By proper selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with Schottky diode, it was found that the internal Schottky diode could significantly increase the ESD threshold from 450V to 1300V.

Keywords

III-V semiconductors; Schottky diodes; electrostatic discharge; etching; gallium compounds; indium compounds; light emitting diodes; optical fabrication; optical losses; quantum well devices; wide band gap semiconductors; 450 to 1300 V; ESD protection; GaN Schottky diodes; InGaN; InGaN-GaN; MQW; bonding pads; etching; green LED; optical loss; re-deposition techniques; Bonding; Electrostatic discharge; Etching; Gallium nitride; Light emitting diodes; Optical losses; Protection; Quantum well devices; Schottky diodes; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on

Print_ISBN

0-7803-7766-4

Type

conf

DOI

10.1109/CLEOPR.2003.1274679

Filename

1274679