Novel BJT test structure for high-performance matching characteristics in CMOS-based analog applications

Author

Jung, Yi-Jung ; Park, Byoung-Seok ; Han, In-Shik ; Kwon, Hyuk-Min ; Park, Sang-Uk ; Bok, Jung-Deuk ; Chung, Yi-Sun ; Lim, Min-Gyu ; Lee, Jung-Hwan ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

fYear

2011

fDate

4-7 April 2011

Firstpage

198

Lastpage

200

Abstract

A novel test structure of bipolar junction transistors fabricated using CMOS technology is proposed for high-performance analog applications. The matching characteristics of collector current I_C and current gain β of the proposed structure show improvement of about 31% and 24%, respectively, over those of the conventional structure, although the area of the proposed structure is smaller than that of the conventional structure. The proposed structure exhibits a decrease in collector current and current gain of less than 7.4% and 1.8%, respectively, compared with the conventional structure. The proposed test structure is highly promising for CMOS-based, high-performance, analog applications.

Keywords

CMOS analogue integrated circuits; bipolar transistors; semiconductor device testing; BJT test structure; CMOS-based analog applications; bipolar junction transistors; collector current integrated circuit; high-performance matching characteristics; Analog circuits; CMOS integrated circuits; CMOS technology; Current density; Resistance; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on

Conference_Location

Amsterdam

ISSN

1071-9032

Print_ISBN

978-1-4244-8526-0

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2011.5976846

Filename

5976846