Abstract :
X-band IMPATT diode chips have been efficiently combined in parallel, in series on diamond, stacked with diamond heat sinks and using lumped element circuit techniques with mode suppression. Combined device types include c.w. silicon p+-n-n+, c.w. GaAs Schottky lo-hi-lo, pulsed GaAs p+-hi-lo and pulsed GaAs double-drift. This paper will summarize tasks performed over a four year period and will attempt to place some of the results in perspective with respect to practical applications. Work at 35 GHz, begun in December 1978, will also be described.
