DocumentCode
2652524
Title
Improved parameter extraction procedures for the R3 model
Author
McAndrew, Colin C. ; Bettinger, Tamara
Author_Institution
Freescale Semicond., Tempe, AZ, USA
fYear
2011
fDate
4-7 April 2011
Firstpage
43
Lastpage
48
Abstract
This paper presents improved extraction algorithms for parameters of the R3 resistor model. For poly resistors we show how the depletion pinching parameters can be computed so that there are no numerical problems. For diffused resistors we provide a data analysis procedure that enables robust estimation of the depletion pinching parameters in the presence both of measurement noise and of velocity saturation or self-heating effects, and show that self-heating can be significantly more important than velocity saturation even for diffused resistors.
Keywords
data analysis; integrated circuit modelling; thin film resistors; R3 resistor model; data analysis; depletion pinching parameters; diffused resistors; measurement noise; parameter extraction; poly resistors; robust estimation; self-heating effects; velocity saturation; Data models; Immune system; Junctions; Resistors; Robustness; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location
Amsterdam
ISSN
1071-9032
Print_ISBN
978-1-4244-8526-0
Electronic_ISBN
1071-9032
Type
conf
DOI
10.1109/ICMTS.2011.5976858
Filename
5976858
Link To Document