Statistical distribution of RTS amplitudes in 20nm SOI FinFETs

Author

Wang, Xingsheng ; Brown, Andrew R. ; Cheng, Binjie ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

This abstract presents a comprehensive 3D simulation study on the impact of a single interface trapped charge in emerging 20nm gate-length FinFETs on an SOI substrate. The impact of the location of trapped charges on the Random Telegraph Signal (RTS) amplitudes is studied in detail. The RTS amplitude associated with particular trap position depends on the complex current density distribution in the Fin and is modified by `native´ statistical variability sources such as metal gate granularity (MGG), line edge roughness (LER), and random discrete dopants (RDD).

Keywords

MOSFET; current density; elemental semiconductors; silicon-on-insulator; statistical analysis; statistical distributions; RTS amplitudes; SOI FinFET; SOI substrate; Si; complex current density distribution; comprehensive 3D simulation; line edge roughness; metal gate granularity; native statistical variability sources; particular trap position; random discrete dopants; random telegraph signal amplitudes; single interface trapped charge; size 20 nm; statistical distribution; Correlation; Current density; Electron traps; FinFETs; Logic gates; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243347

Filename

6243347