DocumentCode
2652593
Title
Strategy for in-line MOS transistor transport optimization
Author
Cros, Antoine
Author_Institution
STMicroelectronics, TR&D/STD/TPS/ECR, Crolles, France
fYear
2011
fDate
4-7 April 2011
Firstpage
55
Lastpage
59
Abstract
We show that short channel transistors transport can be efficiently monitored from in-line measurement of the low field mobility at constant effective gate length, possibly corrected from the Vth variations due to short channel effects. This measurement is independent from Cox, effective dimensions and access resistance, and well correlated to the saturation current variations.
Keywords
MOSFET; optimisation; constant effective gate length; in-line MOS transistor transport optimization; in-line measurement; low field mobility; short channel effects; short channel transistors transport; Current measurement; Electrical resistance measurement; Length measurement; Logic gates; MOSFETs; Measurement uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location
Amsterdam
ISSN
1071-9032
Print_ISBN
978-1-4244-8526-0
Electronic_ISBN
1071-9032
Type
conf
DOI
10.1109/ICMTS.2011.5976860
Filename
5976860
Link To Document