Design of an inductorless 3–10GHz SiGe HBT low-noise amplifier

This paper presents an inductorless SiGe HBT low noise amplifier (LNA) using JAZZ 0.35 ¿m SiGe BiCMOS technology. The LNA is designed with multiple resistive feedback structure. In addition, peaking capacitors at both emitters were adopted to compensate for the gain rolloff at higher frequency. The results of simulation show that the LNA has over 22.3 dB gain with less than 1 dB variation, noise figure varies between 2.4 to 3.3 dB, and input and output reflections (S₁₁ and S₂₂) are both less than -12 dB over the entire band. The entire results exhibit the LNA has good performance. The key advantage of this work is the elimination of inductors thus the chip area can be greatly saved, which is clearly an attractive benefit.